 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2489 DESCRIPTION *Good Linearity of hFE *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 150V (Min) *Wide Area of Safe Operation *Complement to Type 2SA1065 APPLICATIONS *Designed for AF amplifier,high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak ww w scs .i 150 150 5 10 15 120 150 V V V .cn mi e A A PC Collector Power Dissipation @TC=25 Junction Temperature W Tj Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2489 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IE= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 5V 2.5 V ICBO Collector Cutoff Current VCB= 70V; IE= 0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2 mA hFE-1 DC Current Gain IC= 2A ; VCE= 5V hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product hFE-1 Classifications R 40-80 Q 60-120 w w P 90-180 scs .i w O IC= 10A ; VCE= 5V IC= 0.5A ; VCE= 10V .cn mi e 40 30 280 50 MHz 140-280 isc Websitewww.iscsemi.cn |
Price & Availability of 2SC2489
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |